%0 Journal Article
%T Doped-Chamber Deposition of Intrinsic Microcrystalline Silicon Thin Films and Its Application in Solar Cells<br>掺杂室沉积本征微晶硅材料及其在太阳能电池中的应用
%A Sun Fuhe
%A Zhang Xiaodan
%A Zhao Ying
%A Wang Shifeng
%A Han Xiaoyan
%A Li Guijun
%A Wei Changchun
%A Sun Jian
%A Hou Guofu
%A Zhang Dekun
%A Geng Xinhua
%A Xiong Shaozhen
%A <br>孙福河
%A 张晓丹
%A 赵颖
%A 王世峰
%A 韩晓艳
%A 李贵军
%A 魏长春
%A 孙建
%A 侯国付
%A 张德坤
%A 耿新华
%A 熊绍珍
%J 半导体学报
%D 2008
%I 
%X A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at different silane concentrations in a P chamber.Through analysis of the structural and electrical properties of these materials,we conclude that the photosensitivity slightly decreased then increased as the silane concentration increased,while the crystalline volume fraction indicates the opposite change.Results of XRD indicate that thin films have a (220) preferable orientation under certain conditions.Microcrystalline silicon solar cells with conversion efficiency 4.7% and micromorph tandem solar cells 8.5% were fabricated by VHF-PECVD (p layer and i layer of microcrystalline silicon solar cells were deposited in P chamber),respectively.
%K VHF-PECVD
%K intrinsic microcrystalline silicon
%K solar cells<br>甚高频等离子体增强化学气相沉积
%K 本征微晶硅
%K 太阳能电池
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3C19DB2ACDFB157F4D04857E41B05E35&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=94C357A881DFC066&sid=466EAEA150F7AE77&eid=9596F7248FB5796B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=19