%0 Journal Article
%T A 6 GHz high power and low phase noise VCO using an InGaP/GaAs HBT<br>InGaP/GaAs HBT单管6GHz 大功率低噪声压控振荡器
%A Wang Xiantai
%A Shen Huajun
%A Jin Zhi
%A Chen Yanhu
%A Liu Xinyu
%A <br>王显泰
%A 申华军
%A 金智
%A 陈延湖
%A 刘新宇
%J 半导体学报
%D 2009
%I 
%X A 6 GHz voltage controlled oscillator (VCO) optimized for power and noise performance was designed and characterized. This VCO was designed with the negative-resistance (Neg-R) method,utilizing an InGaP/GaAs hetero-junction bipolar transistor in the negative-resistance block. A proper output matching network and a high Q stripe line resonator were used to enhance output power and depress phase noise. Measured central frequency of the VCO was 6.008 GHz. The tuning range was more than 200 MHz. At the central ...
%K VCO
%K C-band
%K InGaP/GaAs HBT
%K low phase noise
%K high power
%K efficiency<br>压控振荡器、C波段、InGaP/GaAs异质结晶体管、低噪声、功率优化
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=056438EE5640D7C532A20EC7EE8BA61F&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=0B39A22176CE99FB&sid=35B7BB00F23E5B78&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0