%0 Journal Article
%T Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering<br>溅射压强对磁控溅射法制备的ZnO:Zr透明导电薄膜性能的影响
%A Liu Hanf
%A Zhang Huafu
%A Lei Chengxin
%A Yuan Changkun
%A <br>刘汉法
%A 张化福
%A 类成新
%A 袁长坤
%J 半导体学报
%D 2009
%I 
%X Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low re- sistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electri- cal resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering p...
%K zirconium-doped?zinc oxide?films
%K ?transparent?conducting?films
%K ?magnetron sputtering
%K sputtering<br>ZnO:Zr
%K 透明导电薄膜
%K 磁控溅射
%K 溅射压强
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=91A7430CA0F46CB7C307CAE89218462F&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=0B39A22176CE99FB&sid=96FBA1D95866AB68&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=0