%0 Journal Article
%T The Bipolar Field-Effect Transistor:II.Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base)<br>双极场引晶体管:II.飘移扩散理论（双MOS栅纯基）
%A Chih-Tang Sah
%A Bin BJie
%A <br>薩支唐
%A 揭斌斌
%J 半导体学报
%D 2007
%I 
%X This paper describes the drift-diffusion theory of the bipolar field-effect transistor (BiFET) with two identical and connected metal-oxide-silicon-gates (MOS-gates) on a thin-pure-base.Analytical solution is obtained by partitioning the two-dimensional transistor into two one-dimensional problems coupled by the parametric surface-electric-potential.Total and component output and transfer currents and conductances versus D.C.voltages from the drift-diffusion theory,and their deviations from the electrochemical (quasi-Fermi) potential-gradient theory,are presented over practical ranges of thicknesses of the silicon base and gate oxide. A substantial contribution from the longitudinal gradient of the square of the transverse electric field is shown.
%K bipolar field-effect transistor theory
%K MOS field-effect transistor
%K simultaneous electron and hole surface and volume channels
%K surface potential
%K longitudinal gradient of transverse electric field<br>双极场引晶体管理论
%K MOS场引晶体管
%K 双极结型晶体管
%K 同时并存空穴电子表面沟道和体积沟道
%K 表面势
%K 横向电场的纵向梯度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=56A4CA2842259628FF5519BD9647887B&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=59906B3B2830C2C5&sid=2F9DAF60B46325CC&eid=A477487C019ACAC8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0