%0 Journal Article
%T Effect of Rapid Thermal Annealing Ambient on Gettering Efficiency and Surface Microstructure in 300mm CZ Silicon Wafers<br>快速退火气氛对300mm CZ硅片吸杂效应和表面微观结构的影响
%A Feng Quanlin
%A He Ziqiang
%A Chang Qing
%A Zhou Qigang
%A <br>冯泉林
%A 何自强
%A 常青
%A 周旗钢
%J 半导体学报
%D 2008
%I 
%X The effect of rapid thermal annealing (RTA) ambient on denuded zone and oxygen precipitates in Czochralski (CZ) silicon wafers is studied in this paper.N2 and a N2/NH3 mixture are used as RTA ambient.It is demonstrated that a high density of oxygen precipitates and thin denuded zone are obtained in N2/NH3 ambient,while a relatively lower density of oxygen precipitates and thicker denuded zone are observed in N2 ambient.As the RTA duration times increased,the oxygen precipitate density increased and the denuded zone depth decreased.X-ray photoelectron spectroscopy (XPS) data and atomic force microscope (AFM) results show that there was a surface nitriding reaction during the N2/NH3 ambient RTA process,which can explain the different effect of RTA ambient.
%K 300mm CZ silicon wafer
%K denuded zone
%K intrinsic gettering
%K RTA
%K XPS
%K AFM<br>300mm
%K CZ硅片
%K 洁净区
%K 本征吸杂
%K 快速退火
%K X射线光电子能谱
%K 原子力显微镜
%K 300ram
%K CZ
%K silicon
%K wafer
%K denuded
%K zone
%K intrinsic
%K gettering
%K RTA
%K XPS
%K AFM
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=02000BD65B252B087363098DD267D46F&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=94C357A881DFC066&sid=F7C11D7E3E8C5D3F&eid=4C69616AE50D2DDC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=15