%0 Journal Article
%T Thin film AlGaInP light emitting diodes with different reflectors<br>薄膜AlGaInP发光二极管中不同反光镜的研究
%A Gao Wei
%A Guo Weiling
%A Zou Deshu
%A Qin Yuan
%A Jiang Wenjing
%A Shen Guangdi
%A <br>高伟
%A 郭伟玲
%A 邹德恕
%A 秦圆
%A 蒋文静
%A 沈光地
%J 半导体学报
%D 2010
%I 
%X The reflectivity versus incident angle of a GaP/Au reflector, a GaP/SiO2/Au triple ODR (omni-directional reflector) and a GaP/ITO/Au triple ODR was calculated. Compared to AlGaInP LEDs with a GaAs absorbing substrate, thin film LEDs with a Au reflector, a SiO2 ODR and an ITO ODR were fabricated. At a current of 20 mA, the optical output power of four samples was respectively 1.04, 1.14, 2.53 and 2.15 mW. The Au diffusion in the annealing process reduces the reflectivity of the Au/GaP reflector to 9%. The different transmittance of quarter-wave thickness ITO and SiO2 induces different optical output power between the SiO2 and ITO thin film LEDs. The insertion of Zn in the ITO ODR LED does not affect the light output but evidently reduces the voltage.
%K LE
%K AlGaInP
%K ODR<br>发光二极管，全方位反光镜，AlGaInP
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=83E57D1B9F1E765E38E83B0820D567FD&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=59906B3B2830C2C5&sid=B124205E7502E239&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0