%0 Journal Article
%T DC Characteristics of AlGaN/GaN HEMTs with a Field Plate Gate<br>具有场板结构的AlGaN/GaN HEMT的直流特性
%A Wei Ke
%A Liu Xinyu
%A He Zhijing
%A Wu Dexin
%A <br>魏珂
%A 刘新宇
%A 和致经
%A 吴德馨
%J 半导体学报
%D 2008
%I 
%X This paper reports two kinds of AlGaN/GaN HEMTs with the field plate gate.In contrast with a conventional HEMT structure,their DC characteristics are improved and the broken voltage is over 100V.The reverse leakage current of the Schottky gate is reduced from 0.037 to 0.0057mA with a 100V voltage between gate and drain using a field plate.Its broken voltage is increased from 78 to over 100V.The HEMTs with the gate field plate structure and the source field plate structure are compared and their high frequency characteristics are also discussed.
%K AlGaN/GaN
%K HEMT
%K broken voltage
%K Schottky characteristics
%K field plate structure<br>AIGaN/GaN
%K 高迁移率晶体管
%K 肖特基特性
%K 击穿电压
%K 场板结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=54DFCC124880BF43FCD50F315039822B&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=38B194292C032A66&sid=D8414BC1307BF1A3&eid=C7A2B92569DF5458&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12