%0 Journal Article
%T Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD<br>MOCVD生长的GaN 薄膜中缺陷团引起的X射线漫散射研究
%A Ma Zhifang
%A Wang Yutian
%A Jiang Desheng
%A Zhao Degang
%A Zhang Shuming
%A Zhu Jianjun
%A Liu Zongshun
%A Sun Baojuan
%A Duan Ruifei
%A Yang Hui
%A Liang Junwu
%A <br>马志芳
%A 王玉田
%A 江德生
%A 赵德刚
%A 张书明
%A 朱建军
%A 刘宗顺
%A 孙宝娟
%A 段瑞飞
%A 杨辉
%A 梁骏吾
%J 半导体学报
%D 2008
%I 
%X High-resolution X-ray diffraction has been employed to investigate the diffuse scattering in a (0001) oriented GaN epitaxial film grown on sapphire substrate.The analysis reveals that defect clusters are present in GaN films and their concentration increases as the density of threading dislocations increases.Meanwhile,the mean radius of these defect clusters shows a reverse tendency.This result is explained by the effect of clusters preferentially forming around dislocations,which act as effective sinks for the segregation of point defects.The electric mobility is found to decrease as the cluster concentration increases.
%K X-ray diffuse scattering
%K GaN
%K defect cluster<br>X射线漫散射
%K GaN
%K 缺陷团
%K X-ray
%K diffuse
%K scattering
%K GaN
%K defect
%K cluster
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=318F0074324187FC3DB2CA2B4092FCAF&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=DF92D298D3FF1E6E&sid=D92306F676C2377C&eid=076A4355FDA11BCF&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=17