%0 Journal Article
%T Characterization and Reliability of Thin Film Resistors for MMICs Application Based on AlGaN/GaN HEMTs<br>应用于AlGaN/GaN HEMTs MMIC薄膜电阻的特性与可靠性
%A Yao Xiaojiang
%A Pu Yan
%A Liu Xinyu
%A Wu Weichao
%A <br>姚小江
%A 蒲颜
%A 刘新宇
%A 吴伟超
%J 半导体学报
%D 2008
%I 
%X Tantalum nitride (TaN) and nichrome (NiCr) are the two most common materials used as thin film resistors (TFR) for monolithic microwave integrated circuits (MMIC) based on AlGaN/GaN high electron mobility transistors (HEMTs).In this study,we compare the reliability of the two materials used as TFRs on a semi-insulation 4H SiC substrate.Through the comparison between NiCr and TaN thin-film resistor materials,we find the square resistor (Rs) of TaN TFR increases as the annealing temperature increases.However,...
%K TaN
%K NiCr
%K TFR
%K reliability
%K MMIC<br>TaN
%K NiCr
%K 薄膜电阻
%K 可靠性
%K 微波集成电路
%K TaN
%K NiCr
%K TFR
%K reliability
%K MMIC
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=53E456B680CA20BAE46613199F4B3E01&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=DF92D298D3FF1E6E&sid=9D6E80F951A5107A&eid=ED8B09838922B3F8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=6