%0 Journal Article
%T An Analysis of the Importance of Recombination in the Base Side of the Emitter-Base SCR in Abrupt HBTs<br>异质结耗尽层基区侧复合对突变HBT重要性分析
%A Zhou Shouli
%A Ren Xiaomin
%A <br>周守利
%A 任晓敏
%J 半导体学报
%D 2008
%I 
%X In this paper,we investigate the importance of including recombination in the base side of the emitter-base space-charge-region(SCR) in the current continuity equation when computing the current gain in abrupt HBTs.Based on the thermionic field-diffusion model,new analytical expressions for the terminal currents are proposed.These new expressions are more accurate in predicting the performance of HBTs operating at high collector current density because of the inclusion of the recombination currents in the current continuity equation.
%K HBTs
%K thermionic-field-diffusion
%K recombination currents
%K current continuity equation<br>HBT
%K 热场发射
%K 扩散
%K 复合电流
%K 电流连续性方程
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=58A63C7DA141DC7DE0B82350E03E8270&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=E158A972A605785F&sid=6D237E9625601349&eid=04EA291949415E08&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9