%0 Journal Article
%T High temperature characterization of double base epilayer 4H-SiC BJTs<br>双外延基区4H-SiC BJTs的高温特性研究
%A Zhang Qian
%A Zhang Yuming
%A Zhang Yimen
%A Wang Yuehu
%A <br>张倩
%A 张玉明
%A 张义门
%A 王悦湖
%J 半导体学报
%D 2010
%I 
%X Based on the material characteristics and the operational principle of the double base epilayer BJTs, and according to the drift--diffusion and the carrier recombination theory, the common emitter current gain is calculated considering four recombination processes. Then its performance is analyzed under high temperature conditions. The results show that the emitter injection efficiency decreases due to an increase in the base ionization rate with increasing temperature. Meanwhile, the SiC/SiO2 interface states and the quality of the passivation layer will affect the surface recombination velocity, and make an obvious current gain fall-off at a high collector current.
%K 4H-SiC
%K Bipolar Junction Transistors(BJTs)
%K current gain
%K carrier recombination
%K high temperature<br>4H-SiC
%K 双极晶体管
%K 电流增益
%K 载流子复合
%K 高温
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5E3C75FBA8D090D2DE9F49EFA072088A&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=708DD6B15D2464E8&sid=4E980A6E69D791A0&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0