%0 Journal Article
%T Phonon-induced magnetoresistance oscillations in a high-mobility quantum well<br>高迁移率量子阱中声子引起的磁阻震荡
%A Zhou Qisheng
%A Cao Juncheng
%A Qi Ming
%A Lei Xiaolin
%A <br>周其盛
%A 曹俊诚
%A 齐鸣
%A 雷啸霖
%J 半导体学报
%D 2010
%I 
%X We examine the temperature dependence of acoustic-phonon-induced magnetoresistance oscillations in a high-mobility GaAs-based quantum well with conventional transverse and longitudinal phonon modes, using a model in which the temperature increase of the Landau level broadening or the single-particle scattering rate 1/τs is attributed to the enhancement of electron-phonon scattering with rising temperature. The non-monotonic temperature behavior, showing an optimal temperature at which a given order of oscillation amplitude exhibits a maximum and the shift of the main resistance peak to higher magnetic field with rising temperature, is produced, in agreement with recent experimental findings.
%K two-dimensional electron gas
%K phonon-induced magnetoresistance oscillations
%K linear mobility
%K optimal temperature<br>二维电子气，声子引起的磁阻震荡，线性迁移率，最适宜温度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A2FD39DAED1062877E2E6DCD0E058903&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=9CF7A0430CBB2DFD&sid=41D31D72A4997DC0&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0