%0 Journal Article
%T Conductivity modulation enhanced lateral IGBT with SiO2 shielded layer anode by SIMOX technology on SOI substrate<br>Conductivity Modulation Enhanced Lateral IGBT with SiO2 Shielded Layer Anode by SIMOX Technology on SOI Substrate
%A Chen Wensuo
%A Zhang Bo
%A Li Zhaoji
%A Fang Jian
%A Guan Xu
%A <br>陈文锁
%A 张波
%A 李肇基
%A 方健
%A 关旭
%J 半导体学报
%D 2010
%I 
%X New Lateral IGBT with SiO2 shielded layer anode on SOI substrate is proposed and discussed. Compared to the conventional LIGBT, the proposed device offers a conductivity modulation enhanced effect due to the SiO2 shielded layer anode structure which can be formed by SIMOX technology. Simulation results show that, for the proposed LIGBT, during conducting state, the electron-hole plasma concentrations in n-drift region are several times larger than that of conventional LIGBT; the conducting current is up to 37% larger than that of conventional one. The SiO2 shielded layer anode conductivity modulation enhanced effect do not sacrifice other characteristics of device, such as breakdown and switching, but is compatible to other optimized technologies.
%K enhanced conductivity modulation effect
%K shielded anode
%K SIMOX technology<br>conductivity
%K modulation
%K enhanced
%K effect
%K shielded
%K anode
%K SIMOX
%K technology
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AEF8B4C796097F2CC3454D8600A1B094&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=B31275AF3241DB2D&sid=DBD250C2F5FE7092&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0