%0 Journal Article
%T Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors<br>发射区硼掺杂浓度对横向PNP晶体管高低剂量率辐射损伤的影响
%A Zheng Yuzhan
%A Lu Wu
%A Ren Diyuan
%A Wang Yiyuan
%A Wang Zhikuan
%A Yang Yonghui
%A <br>郑玉展
%A 陆妩
%A 任迪远
%A 王义元
%A 王志宽
%A 杨永晖
%J 半导体学报
%D 2010
%I 
%X The characteristics of radiation damage under high or low dose rate in lateral PNP transistors with heavily or lightly doped emitter is investigated in this article. Experimental results show that as total dose increases, the base current of transistors would increase and current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects especially the double effects of oxide trapped charge is discussed in heavily or lightly doped transistors. Finally, through comparison between high- and low-dose-rate response of collector current (IC) in heavily doped LPNP transistors, the abnormal effect can be attribute to the annealing of oxide trapped charge. the response of collector current, IC, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail.
%K doping concentration
%K lateral PNP transistors
%K radiation damage
%K dose rates<br>掺杂浓度，横向PNP晶体管，辐射损伤，剂量率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=96E4EC350204D6673FDA7A86C6CD5A90&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=38B194292C032A66&sid=9848CD65B12155AF&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=18