%0 Journal Article
%T Influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors<br>氢化对碲镉汞光伏探测器暗电流机制的影响
%A Qiao Hui
%A Hu Weid
%A Ye Zhenhu
%A Li Xiangyang
%A Gong Haimei
%A <br>乔辉
%A 胡伟达
%A 叶振华
%A 李向阳
%A 龚海梅
%J 半导体学报
%D 2010
%I 
%X The influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors is studied. The hydrogenation is achieved by exposing samples to a H_2/Ar plasma atmosphere that was produced during a reactive ion etching process.A set of variable-area photomask was specially designed to evaluate the hydrogenation effect. It was found that the current-voltage characteristics were gradually improved when detectors were hydrogenated by different areas.The fitting results of experimental results at...
%K hydrogenation
%K passivation
%K dark current
%K photovoltaic detector
%K HgCdTe<br>氢化
%K 钝化
%K 暗电流
%K 光伏探测器
%K HgCdTe
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=352C1BD554A81862970BC8D922A777AE&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=38B194292C032A66&sid=E4DDF4E0B4B2C863&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=15