%0 Journal Article
%T Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs<br>基于氟等离子体表面处理技术的AlGaN/GaN HEMT器件栅正向泄漏电流研究
%A Chen Wanjun
%A Zhang Jing
%A Zhang Bo
%A Chen Kevin Jing
%A <br>陈万军
%A 张竞
%A 张波
%A 陈敬
%J 半导体学报
%D 2013
%I 
%X The gate forward leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal-semiconductor barrier. Consequently, the gate forward leakage current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied.
%K fluorine-plasma surface treatment
%K AlGaN/GaN HEMTs
%K leakage current<br>氟等离子体表面处理，AlGaN/GaN
%K HEMT，泄漏电流
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4D6BB6A422263A45BF2F56BE5F609854&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=0B39A22176CE99FB&sid=3C73E27DA7223187&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14