%0 Journal Article
%T 120-nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based HEMT<br>120nm栅长In0.7Ga0.3As/In0.52Al0.48As HEMTs 器件
%A Huang Jie
%A Guo Tianyi
%A Zhang Haiying
%A Xu Jingbo
%A Fu Xiaojun
%A Yang Hao
%A Niu Jiebin
%A <br>黄杰
%A 郭天义
%A 张海英
%A 徐静波
%A 付晓君
%A 杨浩
%A 牛洁斌
%J 半导体学报
%D 2010
%I 
%X 120 nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based high electron mobility transitions (HEMTs) are fabricated by a new T-shaped gate electron beam lithograph (EBL) technology, which is achieved by the use of a PMMA/PMGI/ZEP520/PMGI four-layer photoresistor stack. These devices also demonstrate excellent DC and RF characteristics: the transconductance, maximum saturation drain-to-source current, threshold voltage, maximum current gain frequency, and maximum power-gain cutoff frequency of InGaAs/InAlAs HEMTs is 520 mS/mm, 446 mA/mm, -1.0 V, 141 GHz and 120 GHz, respectively. The material structure and all the device fabrication technology in this work were developed by our group.
%K HEMT
%K InP
%K InGaAs/InAlAs
%K cutoff frequency
%K T-shaped gate<br>T形栅
%K HEMT
%K 截止频率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2F5E57298A99B77459E5E9ACB130EB8E&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=DF92D298D3FF1E6E&sid=B1D62361FA06EF13&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0