%0 Journal Article
%T A Monolithic InGaP/GaAs HBT PA for TD-SCDMA Handset Application<br>应用于TD-SCDMA移动终端的单片InGaP/GaAs HBT功率放大器
%A Bi Xiaojun
%A Zhang Haiying
%A Chen Liqiang
%A Huang Qinghua
%A <br>毕晓君
%A 张海英
%A 陈立强
%A 黄清华
%J 半导体学报
%D 2008
%I 
%X This paper demonstrates the design and fabrication of a monolithic HBT power amplifier for TD-SCDMA cellular phones that achieves high efficiency and linearity.The two-stage MMIC integrates the input matching circuits,inter-stage matching circuits,and active bias circuits in a single chip with size as small as 0.91mm×0.98mm.The amplifier obtains a power-added efficiency of 43% (15%) and a gain of 28.5dB (24dB) at the high and low operation mode under the 3.4V supply.In addition,the adjacent channel leakage power is below -45dBc/-56dBc and -39dBc/-50dBc at 1.6MHz/3.2MHz offset in low and high power output modes,respectively,with QPSK modulation.The MMIC offers the potential for low cost production due to small chip size,stable voltage supply,and high performance at the same time.
%K TD-SCDMA
%K power amplifier
%K InGaP/GaAs HBT
%K PAE
%K ACPR<br>TD-SCDMA
%K 功率放大器
%K InGaP/GaAs
%K HBT
%K 功率附加效率
%K 邻近信道功率抑制比
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6DB7B3CBD6E9B560C8D474B77439971A&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=F3090AE9B60B7ED1&sid=945A0D4267ABB31D&eid=9204B40510008238&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9