%0 Journal Article
%T An analytical model for the surface electrical field distribution of LDMOSFETs with shield rings<br>具有屏蔽环结构的LDMOS漂移区表面电场分布模型
%A Chen Lei
%A Du Huan
%A <br>陈蕾
%A 杜寰
%J 半导体学报
%D 2011
%I 
%X An analytical model of an LDMOSFET with a shield ring is established according to the 2D Poisson equation. Surface electrical field distribution along the drift region is obtained from this model and the influence of shield length and oxide thickness on the electrical field distribution is studied. The robustness of this model is verified using ISE TCAD simulation tools. The breakdown voltage of a specific device is also calculated and the result is in good agreement with experimental data.
%K RF LDMOS
%K shield ring
%K RESURF
%K surface electrical field
%K drift region<br>射频LDMOS
%K 屏蔽环
%K RESURF
%K 表面电场
%K 漂移区
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9CB13B1D439D6A76FEC40A7EC6C61409&yid=9377ED8094509821&vid=9971A5E270697F23&iid=94C357A881DFC066&sid=3DE10300D7377C5A&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0