%0 Journal Article
%T Cleaning Method of InSb [-1-1-1] B of n- InSb [111] A/B for growth of epitaxial layers by liquid phase epitaxy<br>
%A Gh Saremini
%A F Zahedi
%A Sh Eminov
%A Ar Karamian
%A <br>
%J 半导体学报
%D 2011
%I 
%X The crystal structure of InSb 111] A/B surfaces shows that this structure is polarized. This means that the surfaces of InSb 111] A and InSb 1 1 1] B contain two different crystallized directions and they have different physical and chemical properties. Experiments were carried out on the InSb 111] A/B surfaces, showing that tartaric acid etchant could create a very smooth surface on the InSb 1 1 1] B without any traces of oxides and etch pit but simultaneously create etch pit on InSb 111] A surfaces. After lapping and polishing, some particles remained on the InSb 1 1 1] B surface, they could not be removed easily by standard cleaning process and if these particles remain on the surface of the substrate, the growth layer was not uniform and some island-like regions were observed. The purpose of this work is to remove these particles on the InSb 1 1 1] B surface. Some morphology images of both surfaces, InSb 111] A/B, will be presented.
%K cleaning InSb
%K lapping
%K polishing
%K InSb [1 1 1] B<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9CB13B1D439D6A76EA5395276AFCC6B1&yid=9377ED8094509821&vid=9971A5E270697F23&iid=94C357A881DFC066&sid=AB50BF35E6E47C16&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0