%0 Journal Article
%T A Design for Triple-Valued NAND and NOR Gates Based on Resonant Tunneling Devices<br>基于RT器件的三值与非门、或非门电路设计
%A Lin Mi
%A Sun Lingling
%A <br>林弥
%A 吕伟锋
%A 孙玲玲
%J 半导体学报
%D 2007
%I 
%X The unique negative differential resistance characteristics lead the RT (resonant tunnel) devices to multiple-valued applications.In this paper,an RT switching circuit model is proposed,ternary NAND and NOR circuits are designed based on the switching sequence theory using RT devices,and they have correct logic certified by the SPICE simulation using MOS net model.This method can be used in other multiple-valued circuits design.
%K RT device
%K multiple-valued logic
%K switching sequence
%K NAND
%K NOR<br>RT器件
%K 多值逻辑
%K 开关序列
%K 与非门
%K 或非门
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=36F9729826EC06F7AAEEE629437927AC&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=59906B3B2830C2C5&sid=A7F20A391020FDEE&eid=9C2DB0A0D5ABE6F8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=19