%0 Journal Article
%T Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmosphericpressure growth<br>
%A Koh Matsumoto
%A Kazutada Ikenag
%A Jun Yamamoto
%A Kazuki Naito
%A Yoshiki Yano
%A Akinori Ubukat
%A Hiroki Tokunag
%A Tadanobu Arimur
%A Katsuaki Cho
%A Toshiya Tabuchi
%A Akira Yamaguchi
%A Yasuhiro Harad
%A Yuzaburo Ban
%A Kousuke Uchiyama
%A <br>
%J 半导体学报
%D 2011
%I 
%K MOVPE
%K GaN: AlGaN
%K atmospheric pressure growth
%K high growth rate<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=47EDA52F450B5264652BBD6298907126&yid=9377ED8094509821&vid=9971A5E270697F23&iid=CA4FD0336C81A37A&sid=7504EF6BBE2E9A4C&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0