%0 Journal Article
%T RF Bias Voltage in ICP Etch Systems<br>ICP等离子体刻蚀系统射频偏压的实验研究
%A Zhang Qingzhao
%A Xie Changqing
%A Liu Ming
%A Li Bing
%A Zhu Xiaoli
%A Chen Baoqin
%A <br>张庆钊
%A 谢常青
%A 刘明
%A 李兵
%A 朱效立
%A 陈宝钦
%J 半导体学报
%D 2008
%I 
%X In order to understand the relationship between RF bias voltage on bottom electrode and other process parameters,we designed an experiment.The results indicated that the relationship varies depending on the other parameters' variation.The upper electrode RF power,the bottom electrode RF power,and gas pressure all distinctly affect this relationship.
%K plasma
%K RF bias voltage
%K ICP
%K dry etch<br>等离子体
%K 射频偏压
%K ICP
%K 干法刻蚀
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DAE4DC9E3FD9E6AD28EC1D448148DA32&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=94C357A881DFC066&sid=724110922AF7E025&eid=88B4027FEBE4F5FF&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7