%0 Journal Article
%T Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer<br>AlGaN/GaN层叠结构插入层改善氮化镓基发光二极管抗静电性能研究
%A Li Zhicong
%A Li Panpan
%A Wang Bing
%A Li Hongjian
%A Liang Meng
%A Yao Ran
%A Li Jing
%A Deng Yuanming
%A Yi Xiaoyan
%A Wang Guohong
%A Li Jinmin
%A <br>李志聪
%A 李盼盼
%A 王兵
%A 李鸿渐
%A 梁萌
%A 姚然
%A 李璟
%A 邓元明
%A 伊晓燕
%A 王国宏
%A 李晋闽
%J 半导体学报
%D 2011
%I 
%X Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes (LEDs), the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared. 6.8% Al composition in the stacks showed the highest electrostatic discharge (ESD) endurance ability at the human body mode up to 6000 V and the pass yield exceeded 95%.
%K AlGaN/GaN stacks
%K light-emitting diodes
%K dislocation density
%K ESD<br>AlGaN
%K 发光二极管
%K 放电容量
%K 堆栈
%K III
%K 氮化物
%K 防静电
%K 插入层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A0C0AC355ED3D774A0D3193C1AD5802D&yid=9377ED8094509821&vid=9971A5E270697F23&iid=708DD6B15D2464E8&sid=21A9D04EEAC5E76B&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=5