%0 Journal Article
%T Performance and Design of GaN-Based Transferred-Electron Devices<br>GaN转移电子器件的性能与基本设计
%A Shao Xianjie
%A Lu Hai
%A Zhang Rong
%A Zheng Youdou
%A Li Zhonghui
%A <br>邵贤杰
%A 陆海
%A 张荣
%A 郑有炓
%A 李忠辉
%J 半导体学报
%D 2008
%I 
%X Based on the basic transit-time domain operation mode of TEDs,we first calculated the ideal maximum oscillation frequency of GaN-based transferred-electron devices (TEDs),which can be as high as 4.7THz.This value is nearly 8 times as high as that of GaAs-based TEDs,which is about 0.6 THz.Next,we calculated the maximum output power of GaN-based TEDs indicating that GaN-based TEDs are promising for high microwave power applications.We also discussed the two critical conditions in GaN-based design for generating stable Gunn oscillations in transit-time domain mode.Our calculation indicates that the product of electron concentration and the length of active layer should be higher than a critical value of 6.3E12cm-2 ;and the doping lever of the active layer has to be smaller than a critical level of 3.2E17cm-3.This study suggests that GaN-based TEDs have significant advantages for high-frequency and high-power microwave generation,which are perspective for high-power THz signal source applications.
%K GaN
%K transferred-electron device
%K negative differential resistance effect
%K maximum oscillation frequency
%K critical doping concentration<br>GaN
%K 转移电子器件
%K 微分负阻效应
%K 最高频率
%K 临界掺杂浓度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=13942FCEBA08655499E7CD120D0C1B26&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=59906B3B2830C2C5&sid=CCBC80F4027FC41E&eid=2C7DEF17DECCFDF3&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=16