%0 Journal Article
%T 259W QCW Al-Free 808nm Linear Laser Diode Arrays<br>259W准连续无铝808nm激光二极管线列阵
%A Liu Suping
%A Zhong Li
%A Zhang Haiyan
%A Wang Cuiluan
%A Feng Xiaoming
%A Ma Xiaoyu
%A <br>刘素平
%A 仲莉
%A 张海燕
%A 王翠鸾
%A 冯小明
%A 马骁宇
%J 半导体学报
%D 2008
%I 
%X Through optimizing the tensile-strained single quantum well(SQW)epitaxial structure and introducing double-channel deep isolation groove etching technologies of linear laser diode arrays,GaAsP/GaInP/AlGaInP SQW separate confinement laser emitting structures are grown by low-pressure metal organic chemical vapor deposition and 1cm-wide laser bars with 50% fill factor are fabricated.The cross sections of the channels are analyzed using scanning electron microscope.Mounted on passively cooled copper heat sinks...
%K laser diode
%K array
%K quasi-QW
%K Al-free<br>激光二极管
%K 列阵
%K 准连续
%K 无铝
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C97BDCE936735E42DB2197B6CA1DCE40&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=59906B3B2830C2C5&sid=184429881B8A78BF&eid=F44D606ED7E8033D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11