%0 Journal Article
%T Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects
%A Toufik Bentrci
%A Faycal Djeffal
%A Abdel Hamid Benhaya
%J 半导体学报
%D 2012
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AF837C3964F7310FED13276BAB3BF6E4&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=CA4FD0336C81A37A&sid=EAA0610CD1321CCB&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=26