%0 Journal Article
%T A Double High-Voltage p-LDMOS and Its Compatible Process for PDP Scan-Driver ICs<br>用于PDP扫描驱动的双高压p-LDMOS及其兼容工艺
%A Li Xiaoming
%A Zhuang Yiqi
%A Zhang Li
%A Xin Weiping
%A <br>李小明
%A 庄奕琪
%A 张丽
%A 辛维平
%J 半导体学报
%D 2008
%I 
%X 报道了基于硅外延BCD工艺的高栅源、高漏源电压的功率pMOS的设计.采用1μm厚的场氧化层作为栅氧介质及RESURF原理优化的漏极漂移区，器件面积为80μm×80μm，工艺上简化为18次光刻，兼容标准CMOS、双极管和高压VDMOS. 测试管耐压超过200V，集成于64路170V PDP扫描驱动芯片，通过了上机测试.
%K PDP
%K HV-PMOS
%K BCD process
%K thick gate-oxide
%K cost-effective<br>PDP
%K HV-PMOS
%K BCD工艺
%K 厚栅氧
%K 低成本
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EB8B705E3B1AE7E3EB45DBA0306D697A&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=9CF7A0430CBB2DFD&sid=EC1380648154B673&eid=2614904FCB8D3A68&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12