%0 Journal Article
%T Fabrication and Characteristics of a Nano-Polysilicon Thin Film Pressure Sensor<br>纳米多晶硅薄膜压力传感器制作及特性
%A Zhao Xiaofeng
%A Wen Dianzhong
%A <br>赵晓锋
%A 温殿忠
%J 半导体学报
%D 2008
%I 
%X 给出一种纳米多晶硅薄膜压力传感器，采用LPCVD法在衬底温度620℃时制备纳米多晶硅薄膜，基于MEMS技术在方形硅膜不同位置制作由4个薄膜厚度为63.0nm的掺硼纳米多晶硅薄膜电阻构成惠斯通电桥结构，实现对外加压力的检测. 实验结果表明，当硅膜厚度75μm时，纳米多晶硅薄膜压力传感器在恒压源5.0V供电时，满量程（160kPa）输出为24.235mV，灵敏度为0.151mV/kPa，精度为0.59%F.S，零点温度系数和灵敏度温度系数分别为-0.124%/℃和-0.108%/℃.
%K nano-polysilicon thin films
%K MEMS technology
%K pressure sensor
%K temperature coefficient<br>纳米多晶硅薄膜
%K MEMS技术
%K 压力传感器
%K 温度系数
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=43C3F9FD0D34647C5FA991A34B155AD2&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=F3090AE9B60B7ED1&sid=438F607B4D053FEF&eid=5A6F5D4235F292B9&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=10