%0 Journal Article
%T A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression<br>具有抑制边缘击穿的层叠结结构的平面型InGaAs/InP盖革雪崩光电二极管的设计
%A Wu Meng
%A Lin Feng
%A Yang Fuhua
%A Cao Yanming
%A <br>吴孟
%A 林峰
%A 杨富华
%A 曹延名
%J 半导体学报
%D 2008
%I 
%X A Geiger mode planar InGaAs/InP avalanche photodiode (APD) with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis.The photodiode breakdown voltage is reduced to 54.3V by controlling the central junction depth,while the electric field distribution along the device central axis is controlled by adjusting doping level and thickness of the InP field control layer.Using a cascade junction structure at the periphery of the active area,premature edge breakdowns are effectively suppressed.The simulations show that the quadra-cascade structure is a good trade-off between suppression performance and fabrication complexity,with a reduced peak electric field of 5.2E5kV/cm and a maximum hole ionization integral of 1.201.Work presented in this paper provides an effective way to design high performance photon counting InGaAs/InP avalanche photodiodes.
%K Geiger mode APD
%K edge breakdown
%K cascade junction
%K breakdown voltage<br>盖革APD
%K 边缘击穿
%K 层叠结
%K 击穿电压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BB29E56ADA3216FB8EF01F35F140B665&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=9CF7A0430CBB2DFD&sid=0D56350A4FA1FCC9&eid=34603A9A580CC7B9&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13