%0 Journal Article
%T Improved dual-channel 4H-SiC MESFETs with high doped n-type surface layers and step-gate structure<br>具有高掺杂表面层和阶梯栅结构SiC MESFETs双沟道器件研究
%A Deng Xiaochuan
%A Zhang Bo
%A Li Zhaoji
%A Zhang Yourun
%A <br>邓小川
%A 张波
%A 李肇基
%A 张有润
%J 半导体学报
%D 2009
%I 
%X An improved dual-channel 4H-SiC MESFET with high doped n-type surface layer and step-gate structure is proposed, and the static and dynamic electrical performances are analyzed. A high doped n-type surface layer is applied to obtain a low source parasitic series resistance, while the step-gate structure is utilized to reduce the gate capacitance by the elimination of the depletion layer extension near the gate edge, thereby improving the RF characteristics and still maintaining a high breakdown voltage and a large drain current in comparison with the published SiC MESFETs with a dual-channel layer. Detailed numerical simulations demonstrate that the gate-to-drain capacitance, the gate-to-source capacitance, and the source parasitic series resistance of the proposed structure are about 4%, 7%, and 18% smaller than those of the dual-channel structure, which is responsible for 1.4 and 6 GHz improvements in the cut-off frequency and the maximum oscillation frequency.
%K high doped surface layer
%K step-gate
%K 4H-SiC MESFETs<br>高掺杂表面层
%K 阶梯栅
%K 4H-SiC
%K MESFETs
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0370144F7B4F5E6B5D527F2F71D5FF10&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=DF92D298D3FF1E6E&sid=1C44C168E75C2585&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0