%0 Journal Article
%T Design of InGaAsP Composite Collector for InP DHBT<br>含InGaAsP的InP DHBT复合式集电区结构设计
%A Cheng Wei
%A Jin Zhi
%A Yu Jinyong
%A Liu Xinyu
%A <br>程伟
%A 金智
%A 于进勇
%A 刘新宇
%J 半导体学报
%D 2007
%I 
%X A composite collector structure containing InGaAsP was designed,which can effectively eliminate the energy spike at the B-C junction and avoid the current blocking effect.The dependence of the characteristics of a DHBT on the parameters of the collector structure were analyzed theoretically,and an optimized result was delivered which can give a theoretical direction and reference for the design of this kind of composite collector.The data were analyzed based on the theory of this paper,and a satisfactory result was obtained.
%K InP/InGaAs
%K HBT
%K composite collector
%K barrier spike<br>InP/InGaAs
%K HBT
%K 复合式集电区
%K 势垒尖峰
%K InGaAsP
%K DHBT
%K 复合式
%K 集电区
%K 结构设计
%K Collector
%K Composite
%K 结果
%K 数据
%K 文献
%K 设计参考
%K 指导
%K 优化方案
%K 影响
%K 性能
%K 参数
%K 类型
%K 分析
%K 理论
%K 第一次
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=14C2ED1476E6BCF3&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=B31275AF3241DB2D&sid=E4D705EE6D9DC112&eid=7C8C2BAFC9BA0571&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=6