%0 Journal Article
%T A 3.4-3.6 GHz power amplifier in an InGaP/GaAs HBT<br>A 3.4-3.6GHz Power amplifier in InGaP-GaAs HBT
%A Hao Mingli
%A Zhang Zongnan
%A Zhang Haiying
%A <br>郝明丽
%A 张宗楠
%A 张海英
%J 半导体学报
%D 2011
%I 
%X This paper presents a 3.4-3.6GHz power amplifier (PA) designed and implemented in InGaP/GaAs HBT technology. By optimizing the off-chip output matching network and designing an extra input-matching circuit on PCB, several problems are resolved, such as resonant frequency point migration, worse matching and lower gain caused by parasitics inside and outside of the chip. Under Vcc=4.3V and Vbias=3.3V, a P1dB of 27.1dBm has been measured at 3.4GHz with a PAE of 25.8%, the 2nd and 3rd harmonics are -64dBc and -51dBc, respectively. Besides, this PA shows a linear gain more than 28dB with S11<-12.4dB and S22<-7.4dB in 3.4-3.6GHz band.
%K 3
%K 4-3
%K 6GHz
%K InGaP HBT
%K PA<br>3.4-3.6GHz
%K InGaP
%K HBT
%K PA
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D52C2BA5472F4DECF84006599344617E&yid=9377ED8094509821&vid=9971A5E270697F23&iid=9CF7A0430CBB2DFD&sid=72D184EC37A57FC0&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8