%0 Journal Article
%T Influence of electron irradiation on the switching speed in insulated gate bipolar transistors<br>电子辐照对绝缘栅双极晶体管开关速度的影响
%A Lu Shuojin
%A Wang Lixin
%A Lu Jiang
%A Liu Gang
%A Han Zhengsheng
%A <br>卢烁今
%A 王立新
%A 陆江
%A 刘刚
%A 韩郑生
%J 半导体学报
%D 2009
%I 
%X The influence of electron irradiation on the switching speed in insulated gate bipolar transistors (IGBT) with different epitaxial layer thicknesses is discussed in detail. The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer. However, there is no obvious difference between the ratios of the fall time after irradiation to those before irradiation for different epitaxial layer thicknesses. The increase in switching speed of the IGBT is accompanied by an increase in the forward drop, and a trade-off curve between forward voltage drop and fall time of IGBT is presented.
%K electron irradiation
%K fall time
%K switching speed
%K IGBT<br>电子辐照
%K 下降时间
%K 开关速度
%K IGBT
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D035CFAA46BF611B54379D96E2D2DA65&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=B31275AF3241DB2D&sid=39D2F37E5B65C649&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0