%0 Journal Article
%T Exciton Recombination in the Coupling Structure of a ZnCdSe Quantum Well and CdSe Quantum Dots<br>ZnCdSe量子阱/CdSe量子点耦合结构中的激子复合
%A Jin Hu
%A Bu Fanliang
%A Li Lihu
%A Wang Rong
%A Zhang Zhenzhong
%A Zhang Ligong
%A Zheng Zhuhong
%A Shen Dezhen
%A <br>金华
%A 卜凡亮
%A 李丽华
%A 王蓉
%A 张振中
%A 张立功
%A 郑著宏
%A 申德振
%J 半导体学报
%D 2008
%I 
%X Coupling structures for a ZnCdSe quantum well and CdSe quantum dots (QDs) with different thickness of barrier layer were fabricated by metal organic chemical vapor deposition (MOCVD).The recombination and tunneling of excitons in the ZnCdSe QW/CdSe QDs structure were investigated using photoluminescence (PL) spectra at 5K.The tunneling process of the exciton from QW to QDs was observed.The excitation light power dependence of PL peak position and PL-integrated intensity were also investigated,respectively.The results reveal that in this structure with thinner barrier layer,the absorption saturation in ZnCdSe quantum well can be restrained.
%K ZnCdSe QW/CdSe QDs
%K photoluminescence
%K recombination
%K tunneling<br>ZnCdSe量子阱/CdSe量子点
%K 光致发光
%K 复合
%K 隧穿
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E41C7F2918B447F6350970F711E2D855&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=708DD6B15D2464E8&sid=4F82C471BB13578B&eid=C24DB66A44ADAAF0&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12