%0 Journal Article
%T Stoichiometry in SI-GaAs Bulk Materials by Triple Axis Mode X-Ray Diffraction Measurements<br>X射线三轴晶衍射法测量半绝缘GaAs单晶的化学配比
%A Li Jianming
%A Tu Hailing
%A Hu Guangyong
%A Wang Chaoqun
%A Zheng Ansheng
%A Qian Jiayu
%A <br>黎建明
%A 屠海令
%A 胡广勇
%A 王超群
%A 郑安生
%A 钱嘉裕
%J 半导体学报
%D 2002
%I 
%X The lattice parameters of SI GaAs are accurately measured by triple axis mode X ray diffraction method.The stoichiometry in SI GaAs bulk materials is calculated based on the model of the interstitial pairs for describing excess arsenic in GaAs.Triple axis mode X ray diffraction measurements are non destructive and high precision.The reasons of affecting the lattice parameters of SI GaAs are discussed.
%K lattice parameters
%K stoichiometry
%K double
%K crystal X
%K ray diffraction
%K triple axis mode X
%K ray diffraction<br>晶格参数
%K 化学配比
%K 双晶衍射
%K 三轴晶模式衍射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0A55E041DCFD7FAE&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=708DD6B15D2464E8&sid=F61A98B4CFAD5F2A&eid=ACF317960D6DF955&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=35