%0 Journal Article
%T TDC Model for PSG Sacrificial Layer Etching with Hydrofluoric Acid<br>氢氟酸和PSG牺牲层腐蚀的TDC模型
%A Wu Changju
%A Wang Hao
%A Jin Zhonghe
%A Ma Huilian
%A Wang Yuelin
%A <br>吴昌聚
%A 王昊
%A 金仲和
%A 马慧莲
%A 王跃林
%J 半导体学报
%D 2008
%I 
%X HF etching of sacrificial layers with different structures,namely channel,bubble,and joint-channel,is studied.The existing model cannot fit the experimental data well.The error of etching rate between the existing model and the experimental data increases with etching time.A modified model considering the diffusion coefficient as a function of HF concentration and temperature is proposed.The etching rate coefficient as a function of temperature and the effect of reaction production are also considered in the modified model.For the joint-channel structure,a new mathematical model for the etching profile is also adopted.Experimental data obtained with channel,bubble,and joint-channel structures are compared with the modified model and the previous model.The results show that the modified model matches the experiments well.
%K diffusion coefficient
%K etching rate
%K sacrificial oxide
%K TDC model<br>扩散系数
%K 腐蚀速率
%K 牺牲层
%K TDC模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=52D92FB4EA9C7EBDCC3F554DF2587D2F&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=B31275AF3241DB2D&sid=6B48C3DA6EA0194C&eid=47D3259DD85FC8F7&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=16