%0 Journal Article
%T Simulation study of new 3-terminal devices for high speed STT-RAM<br>新型三端自旋转移扭矩随机存储器器件的模拟研究
%A Zhang Shuchao
%A Hu Jiangfeng
%A Chen Peiyi
%A Deng Ning
%A <br>张树超
%A 胡江峰
%A 陈培毅
%A 邓宁
%J 半导体学报
%D 2011
%I 
%X To improve the performance of spin transfer torque random access memory (STT-RAM), especially writing speed, we propose three modified 3-terminal STT-RAM cells. A magnetic dynamic process in the new structures was investigated through micro-magnetic simulation. The best switching speed of the new structures is 120% faster than that of the rectangular 3-terminal device. The optimized 3-terminal device offers high speed while maintaining the high reliability of the 3-terminal structure.
%K spin transfer torque non-volatile memory spin valve micro-magnetic simulation<br>终端设备
%K STT
%K RAM
%K 随机存取存储器
%K 仿真
%K 结构动态
%K 自旋转移
%K 写入速度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B70A235664D163BA0591E4B1E298D796&yid=9377ED8094509821&vid=9971A5E270697F23&iid=DF92D298D3FF1E6E&sid=876D199E79CC58D2&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0