%0 Journal Article
%T The Bipolar Field-Effect Transistor:V.Bipolar Electrochemical Current Theory(Two-MOS-Gates on Thin-Base)<br>双极场引晶体管:V.双极电化电流理论（双MOS栅纯基）
%A Jie Binbin
%A Sah Chih-Tang
%A <br>揭斌斌
%A 薩支唐
%J 半导体学报
%D 2008
%I 
%X This paper reports the intrinsic-structure DC characteristics computed from the analytical electrochemical current theory of the bipolar field-effect transistor (BiFET) with two identical MOS gates on nanometer-thick pure-base of silicon with no generation-recombination-trapping.Numerical solutions are rapidly obtained for the three potential variables,electrostatic and electron and hole electrochemical potentials,to give the electron and hole surface and volume channel currents,using our cross-link two-route or zig-zag one-route recursive iteration algorithms. Boundary conditions on the three potentials dominantly affect the intrinsic-structure DC characteristics,illustrated by examples covering 20-decades of current (10E-22 to 10E-2 A/Square at 400cm2/ (V·s) mobility for 1.5nm gate-oxide,and 30nm-thick pure-base). Aside from the domination of carrier space-charge-limited drift current in the strong surface channels,observed in the theory is also the classical drift current saturation due to physical pinch-off of an impure-base volume channel depicted by the 1952 Shockley junction-gate field-effect transistor theory,and its extension to complete cut-off of the pure-base volume channel,due to vanishing carrier screening by the few electron and hole carriers in the pure-base,with Debye length (25mm) much larger than device dimension (25nm).
%K bipolar field-effect transistor theory
%K recursive iteration
%K electron and hole electrochemical potentials
%K electric potential
%K boundary conditions<br>双极场引晶体管理论
%K 递归循环
%K 电子和空穴电化学势
%K 静电势
%K 边界条件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0DF3B5D043AACCFB7BEDFD058543A257&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=E158A972A605785F&sid=E6A0A363CA4FC5CF&eid=821800203AD09E7B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8