%0 Journal Article
%T A Simple Method of Surface Parameter Extraction for Gate Schottky Contact in 4H-SiC MESFETs<br>4H-SiC MESFET肖特基栅接触的界面参数提取
%A Zhang Yimen
%A Zhang Yuming
%A Che Yong
%A Sun Ming
%A <br>吕红亮
%A 张义门
%A 张玉明
%A 车勇
%A 孙明
%J 半导体学报
%D 2008
%I 
%X 研究了界面态对4H-SiC MESFET的肖特基栅接触的影响.栅接触工艺主要采用Ti/Pt/Au蒸发,经过剥离后形成.基于热电子理论提出了一种参数提取方法,得到界面态密度和界面电容分别为4.386×1013cm-2·eV-1和8.394×10-6F/cm2,这与测量得到的器件端特性一致.
%K silicon carbide
%K Schottky contact
%K surface states
%K device modeling<br>碳化硅
%K 肖特基接触
%K 表面态
%K 器件模型
%K silicon
%K carbide
%K Schottky
%K contact
%K surface
%K states
%K device
%K modeling.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DDB20D5A73F311E8703E535DFEE1C77A&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=38B194292C032A66&sid=D9202C57BAB9096F&eid=E0172F1A638CE984&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8