%0 Journal Article
%T Fabrication and Memory Characteristics of a New Organic Thin Film Device<br>一种有机薄膜器件的制备及电存储特性
%A Guo Peng
%A Ji Xin
%A Dong Yuanwei
%A Xu Wei
%A <br>郭鹏
%A 季欣
%A 董元伟
%A 吕银祥
%A 徐伟
%J 半导体学报
%D 2008
%I 
%X The reversible electrical bistability of a new organic thin film device with a metal/organic/metal sandwich structure is investigated.The anode and cathode metals of the device are Ag and Al,respectively,and were fabricated by vacuum evaporation.The middle medium is 2-(hexahydropyrimidin-2-ylidene)-malononitrile (HPYM).The device,which has polar memory characteristics,can be written from a low-conductance state to a high-conductance state by a voltage pulse and can be erased by a reverse voltage.The device with a thin Al2O3 layer between base metal Al and HPYM can produce different high-conductance states through the application of different positive voltages,resulting in multilevel memory capability.The effect of different electrode combinations on conductance switching devices is studied and UV-Vis absorption spectra and Raman spectra are used to obtain information on the interfaces of the devices.
%K organic film device
%K memory device
%K electrical bistability
%K multilevel conductance<br>有机薄膜器件
%K 存储器
%K 电双稳特性
%K 多重态导电特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=CACE0571EC78A1EAFC53726E4EC10DC3&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=CA4FD0336C81A37A&sid=B0EBA60720995721&eid=475189FCB44F11F6&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14