%0 Journal Article
%T An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process<br>采用金属耦合电容实现级间匹配的射频功率放大器
%A Feng Xiaoxing
%A Zhang Xing
%A Ge Binjie
%A Wang Xin''an
%A <br>冯晓星
%A 张兴
%A 葛彬杰
%A 王新安
%J 半导体学报
%D 2009
%I 
%X One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370×200 m2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.
%K power amplifiers
%K radio frequency amplifiers
%K UHF amplifiers
%K RFID
%K digital CMOS process<br>功率放大器，射频功率放大器，超高频放大器，射频识别，数字CMOS工艺
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D7A80A60163CAF6D43FC34AD1C1A17BA&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=B31275AF3241DB2D&sid=52ED053E9A589DE5&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=5