%0 Journal Article
%T High-Power Ridge-Waveguide Tapered Diode Lasers at 980nm<br>高功率980nm锥形增益区脊形波导量子阱激光器的优化
%A Li Jing
%A Ma Xiaoyu
%A Liu Yuanyuan
%A <br>李璟
%A 马骁宇
%A 刘媛媛
%J 半导体学报
%D 2007
%I 
%X 利用MOCVD生长980nm InGaAs-AlGaAs渐变折射率分别限制异质结单量子阱激光器外延片,采用锥形增益区脊形波导结构制备器件.保持总腔长1850μm不变,改变脊形区的长度分别为450,700和950μm,对比三种情况的P-I特性和光束质量.发现LRW＝450μm时,器件特性参数和远场光束质量最优,斜率效率达0.83W/A,饱和功率为4.28W.输出功率为1W时,远场发散角为7.5°×30.6°,M2因子为3.79.
%K tapered
%K ridge-waveguide
%K 980nm
%K beam propagation factor<br>锥形增益
%K 脊形波导
%K 980nm
%K 光束质量因子
%K tapered
%K ridge-waveguide
%K 980nm
%K beam
%K propagation
%K factor
%K 高功率
%K 锥形增益区
%K 脊形波导
%K 量子阱激光器
%K 优化
%K Lasers
%K beam
%K quality
%K propagation
%K ratio
%K devices
%K maximum
%K output
%K power
%K different
%K ridge
%K waveguide
%K study
%K influence
%K straight
%K section
%K spatial
%K mode
%K filtering
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A79739FF0716F16C&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=94C357A881DFC066&sid=9107B2E171152411&eid=7C13E30F5EDBE7AB&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=18