%0 Journal Article
%T Recombination Along the Track of Proton in SiO2 Films<br>用Columnar模型对电子空穴对复合逃逸产额的模拟计算
%A WANG Gui-zhen
%A ZHANG Zheng-xuan
%A JIANG Jing-he
%A LUO Yin-hong
%A <br>王桂珍
%A 张正选
%A 姜景和
%A 罗尹虹
%J 半导体学报
%D 2001
%I 
%X The Columnar Model is introduced in details.The recombination along the track of protons with the energy below 3MeV is calculated.Theoretical and experimental results are in good agreement with each other,as indicates this method can predict the actual total dose effect of the transistors.
%K recombination model
%K escaping yield
%K stopping power
%K Columnar Model<br>复合模型
%K 逃逸产额
%K 阻止本领
%K Columnar模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=599C2FF0B74AC568&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=9CF7A0430CBB2DFD&sid=4A8E5D086592D016&eid=70024E0C77AE588F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=5