%0 Journal Article
%T New Lateral Super Junction MOSFETs with n+-Floating Layeron High-Resistance Substrate<br>高阻衬底上具有n＋浮空层的横向Super Junction MOSFETs
%A Duan Baoxing
%A Zhang Bo
%A Li Zhaoji
%A <br>段宝兴
%A 张波
%A 李肇基
%J 半导体学报
%D 2007
%I 
%X A new super junction LDMOST structure that suppresses the substrate-assisted depletion effect is designed with an n+-floating layer embedded in the high-resistance p-type substrate by implanting phosphor or arsenic.This effect results from a charge imbalance between the n-type and p-type pillars when the n-type pillars are depleted by p-type substrate.The high electric field around the drain is reduced by the n+-floating layer due to the REBULF effect,which causes the redistribution of the bulk electric field in the drift region,and thus the substrate supports more biases.The new structure features high breakdown voltage,low on-resistance,and charge balance in the drift region.
%K super junction
%K LDMOST
%K substrate-assisted depletion
%K n+-floating layer
%K breakdown voltage<br>super
%K junction
%K LDMOST
%K 衬底辅助耗尽
%K n^＋-浮空层
%K 击穿电压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B5616DCF0E6CDA72&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=0B39A22176CE99FB&sid=43608FD2E15CD61B&eid=C5F8B8CB20F1B3D8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=16