%0 Journal Article
%T Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array<br>新型多位非均匀沟道电荷俘获型存储器及新型虚拟源端的NAND阵列结构
%A Gu Haiming
%A Pan Liyang
%A Zhu Peng
%A Wu Dong
%A Zhang Zhigang
%A Xu Jun
%A <br>古海明
%A 潘立阳
%A 祝鹏
%A 伍冬
%A 张志刚
%A 许军
%J 半导体学报
%D 2010
%I 
%X In order to overcome the bit-to-bit interference of the traditional multi-level NAND type device, this paper firstly proposes a novel multi-bit non-uniform channel charge trapping memory (NUC-CTM) device with virtual-source NAND-type array architecture, which can effectively restrain the second-bit effect (SBE) and provide 3-bit per cell capability. Owing to the n- buffer region, the SBE induced threshold voltage window shift can be reduced to less than 400 mV and the minimum threshold voltage window between neighboring levels is larger than 750 mV for reliable 3-bit operation. A silicon-rich SiON is also investigated as a trapping layer to improve the retention reliability of the NUC-CTM.
%K multi-bit storage
%K non-uniform channel
%K charge trapping memory
%K NAND array
%K SiON layer<br>多位存储，非均匀沟道，电荷俘获存储器，NAND阵列，氮氧化硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BE490C5601A910ACB9A4F41A3C59B114&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=F3090AE9B60B7ED1&sid=A744C4696012E14A&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0