%0 Journal Article
%T Overlay mark optimization for thick-film resist overlay metrology<br>厚光刻胶套准量测中套准监测图形的优化
%A Zhu Liang
%A Li Jie
%A Zhou Congshu
%A Gu Yili
%A Yang Huayue
%A <br>朱亮
%A 李杰
%A 周从树
%A 顾以理
%A 杨华岳
%J 半导体学报
%D 2009
%I 
%X For thick resist implant layers, such as a high voltage P well and a deep N well, systematic and uncor-rectable overlay residues brought about by the tapered resist profiles were found. It was found that the tapered profile is closely related to the pattern density. Potential solutions of the manufacturing problem include hardening the film solidness or balancing the exposure density. In this paper, instead of focusing on the process change methodology, we intend to solve the issue of the overlay metrology error from the perspective of the overlay mark design. Based on the comparison of the overlay performances between the proposed overlay mark and the original design, it is shown that the optimized overlay mark target achieves better performance in terms of profiles, dynamic precision, tool induced shift (TIS), and residues. Furthermore, five types of overlay marks with dummy bars are studied, and a recommendation for the overlay marks is given.
%K overlay metrology error
%K dynamic precision
%K tool induced shift
%K statistical process control
%K depth of focus
%K exposure latitude<br>套准量测误差
%K 动态精确度
%K 设备引起的偏移
%K 统计过程控制
%K 景深
%K 曝光宽容度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BD13FEB5E7D4B994B4D21A4DE85AB5E1&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=B31275AF3241DB2D&sid=0DEECE803570675A&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0