%0 Journal Article
%T Characteristics of a GaN-based Gunn diode for THz signal generation<br>Studies on the Characteristics of GaN-based Gunn Diode for THz Signal Generation
%A R K Parida
%A N C Agrawala
%A G N Dash
%A A K Panda
%A <br>R K Pari
%A N C Agrawal
%A G N Dash
%A A K Panda
%J 半导体学报
%D 2012
%I 
%X A generalized large-signal computer simulation program for a Gunn oscillator has been developed. The properties of a Gunn diode oscillator based on the widely explored GaN, are investigated using the developed program. The results show some interesting properties in GaN Gunn diodes which are not seen in GaAs and InP diodes. An output power of 1400 kW/cm2 is achieved from the GaN Gunn diode, as compared to 4.9 kW/cm2 from a GaAs diode.
%K Gunn devices
%K semiconductor diodes
%K semiconductor materials
%K power
%K GaN<br>耿氏二极管
%K GaN
%K 大信号
%K 特性
%K 计算机模拟程序
%K 太赫兹
%K 耿氏振荡器
%K GaAs
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A6275A725A751A6EA37EFE9C36C93055&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=5D311CA918CA9A03&sid=1681D7B7CE50EA96&eid=DF92D298D3FF1E6E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=20