%0 Journal Article
%T Fabrication of Enhancement Mode GaN Metal-Insulator-Semiconductor Field Effect Transistor<br>Fabrication of Enhancement Mode GaN Metal- Insulator-Semiconductor Field Effect Transistor
%A CHEN Peng
%A <br>陈鹏
%A 张荣
%A 周玉刚
%A 罗志云
%A 谢世勇
%A 陈志忠
%A 李卫平
%A 郑有炓
%J 半导体学报
%D 2000
%I 
%X Recently,a numberofpapers on Ga N-based field-effecttransistors(FETs) have beenreported.The metal-insulator-semiconductor technology is widely adopted in manyapplications since it can provide the high DC input impedance,large gate voltage swings,norm...
%K GaN
%K MISFET
%K Piezoelectric<br>GaN
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E60D5D0B300CE88E&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=38B194292C032A66&sid=1B64850025D0BBBE&eid=AD16A18DBD734D13&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8