%0 Journal Article
%T A Phenomenological MOSFET Model Including Total Dose Radiation Effects at a High Total Dose<br>高剂量辐照条件下的MOSFET总剂量辐照效应模型
%A WAN Xin heng
%A ZHANG Xing
%A GAO Wen yu
%A HUANG Ru
%A WANG Yang yuan
%A <br>万新恒
%A 张兴
%A 高文钰
%A 黄如
%A 王阳元
%J 半导体学报
%D 2001
%I 
%X A phenomenological model is proposed to discuss the total dose radiation effects on MOS devices at a high total dose.The model is verified by the comparison results of the simulated and measured post radiation device characteristics of MOSFETs.As a basic circuit simulation tool,it has proved useful to analyse the MOS transistors exposed to a nuclear environment with high radiations.In addition,the decrease in the electron mobility due to high dose irradiation is indicated to be caused mainly by the increase in Coulomb scattering of the interface charges with an increased density.
%K MOSFET
%K total dose radiation effects
%K high total dose
%K model<br>MOSFET
%K 总剂量辐照效应
%K 高剂量
%K 模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7B45359BC912BC49&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=F3090AE9B60B7ED1&sid=E84660E787B699A9&eid=F016DE22306D4D4A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=15